Light emitting and lasing semiconductor devices and methods
文献类型：专利
| 作者 | HOLONYAK, JR., NICK; FENG, MILTON; WALTER, GABRIEL; JAMES, ADAM |
| 发表日期 | 2010-02-11 |
| 专利号 | US20100034228A1 |
| 著作权人 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting and lasing semiconductor devices and methods |
| 英文摘要 | A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination. |
| 公开日期 | 2010-02-11 |
| 申请日期 | 2008-10-10 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51656]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 推荐引用方式 GB/T 7714 | HOLONYAK, JR., NICK,FENG, MILTON,WALTER, GABRIEL,et al. Light emitting and lasing semiconductor devices and methods. US20100034228A1. 2010-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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