Semiconductor laser apparatus and method of manufacturing the same
文献类型：专利
| 作者 | BESSHO, YASUYUKI; HATA, MASAYUKI; INOUE, DAIJIRO |
| 发表日期 | 2009-04-16 |
| 专利号 | US20090097523A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser apparatus and method of manufacturing the same |
| 英文摘要 | Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other. |
| 公开日期 | 2009-04-16 |
| 申请日期 | 2008-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | BESSHO, YASUYUKI,HATA, MASAYUKI,INOUE, DAIJIRO. Semiconductor laser apparatus and method of manufacturing the same. US20090097523A1. 2009-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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