Semiconductor laser device and method of manufacturing the same as well as optical pickup
文献类型：专利
| 作者 | INOUE, DAIJIRO; OOTA, KIYOSHI; MURAYAMA, YOSHIKI; HIROYAMA, RYOJI; OHBO, HIROKI; TOKUNAGA, SEIICHI |
| 发表日期 | 2009-12-31 |
| 专利号 | US20090323750A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same as well as optical pickup |
| 英文摘要 | A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer. |
| 公开日期 | 2009-12-31 |
| 申请日期 | 2009-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51675]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | INOUE, DAIJIRO,OOTA, KIYOSHI,MURAYAMA, YOSHIKI,et al. Semiconductor laser device and method of manufacturing the same as well as optical pickup. US20090323750A1. 2009-12-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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