Light emitting and lasing transistor devices and methods
文献类型：专利
| 作者 | FENG, MILTON; HOLONYAK, NICK, JR.; WALTER, GABRIEL; THEN, HAN, WUI |
| 发表日期 | 2010-11-18 |
| 专利号 | WO2010087948A3 |
| 著作权人 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting and lasing transistor devices and methods |
| 英文摘要 | A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region. |
| 公开日期 | 2010-11-18 |
| 申请日期 | 2010-01-22 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 推荐引用方式 GB/T 7714 | FENG, MILTON,HOLONYAK, NICK, JR.,WALTER, GABRIEL,et al. Light emitting and lasing transistor devices and methods. WO2010087948A3. 2010-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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