Light emitting diode array chip and method of fabricating the same
文献类型：专利
| 作者 | SAGAWA, TOSHIO; KURATA, KAZUHIRO |
| 发表日期 | 1989-08-16 |
| 专利号 | EP0319907A3 |
| 著作权人 | HITACHI CABLE, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting diode array chip and method of fabricating the same |
| 英文摘要 | A LED array chip (6/26/46) comprising: a first semiconductor layer (16) having a p-type conduction; a second semiconductor layer (17) having a n-type conduction possessing a forbidden band width smaller than the first layer (16) and provided on the first layer (16), so as to form a semiconductor chip having a pn junction (8) at the interface with the first layer (16); the second layer (17) being divided into a first region (A) and a second region (B) by etching the second layer (17) until the pn junction (8), the first region (A) thereof being divided to form individual plural LEDs (22) of predetermined configuration, and the n-type layer (17) in the second region (B) being converted to the p-type layer as so to serve as a common region (13); individual electrodes (18) respectively provided to the surfaces of the LEDs (22); and a common electrode (19) provided to the common region (13), parts of the exposed surface of the p-type layer (16) corresponding to the LEDs ( 22) serving as light emitting surfaces (10). The LED array chip (6/26/46) is mounted on a printed circuit board (1) by directly bonding the individual electroeds (18 ) and the common electroed (19) to the corresponding terminals (7, 9) of the printed circuit (1). |
| 公开日期 | 1989-08-16 |
| 申请日期 | 1988-12-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/51844]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE, LTD. |
| 推荐引用方式 GB/T 7714 | SAGAWA, TOSHIO,KURATA, KAZUHIRO. Light emitting diode array chip and method of fabricating the same. EP0319907A3. 1989-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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