Semiconductor device with integral heatsink
文献类型：专利
| 作者 | SHIMURA, TERUYUKI, C/O MITSUBISHI DENKI K.K.; SAKAI, MASAYUKI, C/O MITSUBISHI DENKI K.K.; HATTORI, RYO, C/O MITSUBISHI DENKI K.K.; MATSUOKA, HIROSHI, C/O MITSUBISHI DENKI K.K.; KATOH, MANABU, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1997-01-02 |
| 专利号 | EP0693778A3 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device with integral heatsink |
| 英文摘要 | A semiconductor device comprises a semiconductor substrate (26) having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate (26) and including an electrode (21); a PHS (27) for dissipating heat generated in the semiconductor element, the PHS comprising a metal layer and disposed on the rear surface of the semiconductor substrate (26); a via-hole (25) comprising a through-hole penetrating through the semiconductor substrate (26) from the front surface to the rear surface and having an inner surface, and a metal (24a, 27a, or 51) disposed in the through-hole and contacting the PHS (27); and an air-bridge wiring (24) comprising a metal film and having first and second portions, the air-bridge wiring (24) contacting the electrode (21) of the semiconductor element at the first portion and contacting the metal (24a, 27a, or 51) of the via-hole (25) at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved. |
| 公开日期 | 1997-01-02 |
| 申请日期 | 1995-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52029]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SHIMURA, TERUYUKI, C/O MITSUBISHI DENKI K.K.,SAKAI, MASAYUKI, C/O MITSUBISHI DENKI K.K.,HATTORI, RYO, C/O MITSUBISHI DENKI K.K.,et al. Semiconductor device with integral heatsink. EP0693778A3. 1997-01-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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