永久金屬性結合方法
文献类型:专利
作者 | DONALD DINGLEY BACON; AVISHAY KATZ; CHIEN-HSUN LEE; KING LIEN TAI; YIU-MAN WONG |
发表日期 | 2000-07-21 |
专利号 | HK1006377A |
著作权人 | AT&T CORP. |
国家 | 中国香港 |
文献子类 | 发明申请 |
其他题名 | 永久金屬性結合方法 |
英文摘要 | A laser device is bonded to a diamond submount (20) by means of a procedure including (1) codepositing an auxiliary layer (22), on a layer of barrier metal (21) that has been deposited overlying the submount, followed by (2) depositing a wetting layer (23) on the auxiliary layer, and (3) by depositing a solder layer (24) comprising alternating metallic layers, preferably of gold and tin sufficient to form an overall tin-rich gold-tin eutectic composition. The barrier metal is typically W, Mo, Cr, or Ru. Prior to bonding, a conventional metallization such as Ti-Pt-Au (three layers) is deposited on the laser device's bottom ohmic contact, typically comprising Ge. Then, during bonding, the solder layer is brought into physical contact with the laser device's metallization under enough heat and pressure, followed by cooling, to form a permanent joint between them. The thickness of the solder layer is advantageously less than approximately 5 µm. The wetting layer is preferably the intermetallic compound Ni₃Sn₄, and the auxiliary layer is formed by codepositing the metallic components of this intermetallic together with the barrier metal. |
公开日期 | 2000-07-21 |
申请日期 | 1998-06-19 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/52150] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | AT&T CORP. |
推荐引用方式 GB/T 7714 | DONALD DINGLEY BACON,AVISHAY KATZ,CHIEN-HSUN LEE,等. 永久金屬性結合方法. HK1006377A. 2000-07-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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