Heat sink for a semiconductor device
文献类型：专利
| 作者 | YOO, MYOUNG KI; BAIK, YOUNG-JOON; HONG, KYUNG TAE |
| 发表日期 | 2001-06-14 |
| 专利号 | US20010003377A1 |
| 著作权人 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Heat sink for a semiconductor device |
| 英文摘要 | A heat sink for a semiconductor device comprises a tungsten-copper composite body and a diamond film coated on the surface of the body. A method for fabricating a heat sink for a semiconductor comprises the steps of fabricating a tungsten-copper composite heat sink, modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink, carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink, and coating the thusly processed surface of the heat sink with a diamond film. Preferably, a process for etching of a tungsten grain precedes selective dissolution of the copper. |
| 公开日期 | 2001-06-14 |
| 申请日期 | 1999-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52217]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | YOO, MYOUNG KI,BAIK, YOUNG-JOON,HONG, KYUNG TAE. Heat sink for a semiconductor device. US20010003377A1. 2001-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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