Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same
文献类型：专利
| 作者 | MIYAJIMA, HIROFUMI; KAN, HIROFUMI; NAITOH, TOSHIO; OHTA, HIROKAZU; KANZAKI, TAKESHI |
| 发表日期 | 2001-06-21 |
| 专利号 | US20010004312A1 |
| 著作权人 | HAMAMATSU PHOTONICS K.K |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same |
| 英文摘要 | A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 having an upper face formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 having a lower face formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. |
| 公开日期 | 2001-06-21 |
| 申请日期 | 2001-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52350]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HAMAMATSU PHOTONICS K.K |
| 推荐引用方式 GB/T 7714 | MIYAJIMA, HIROFUMI,KAN, HIROFUMI,NAITOH, TOSHIO,et al. Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same. US20010004312A1. 2001-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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