Light emitting semiconductor device and method for fabricating same
文献类型：专利
| 作者 | NITTA, KOICHI; OKAZAKI, HARUHIKO; MATSUNAGA, TOKUHIKO |
| 发表日期 | 2001-11-08 |
| 专利号 | US20010038103A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting semiconductor device and method for fabricating same |
| 英文摘要 | An electrode of a metal, which is one of Group IV and VI elements, is deposited on an n-type InxAlyGa1-x-yN layer. Alternatively, after an electrode material of carbon, germanium), selenium, rhodium, tellurium, iridium, zirconium, hafnium, copper, titanium nitride, tungsten nitride, molybdenum or titanium silicide, is deposited on an n-type InxAlyGa1-x-yN layer or a p-type InxAlyGa1-x-yN layer, an impurity for increasing the carrier concentration of the semiconductor layer is ion-implanted, and the annealing is carried out. Thus, it is possible to provide a light emitting semiconductor device, which has a low contact resistance and a sufficient bond strength to the InxAlyGa1-x-yN layer while maintaining the crystallinity of the InxAlyGa1-x-yN layer. |
| 公开日期 | 2001-11-08 |
| 申请日期 | 2001-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | NITTA, KOICHI,OKAZAKI, HARUHIKO,MATSUNAGA, TOKUHIKO. Light emitting semiconductor device and method for fabricating same. US20010038103A1. 2001-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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