Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate
文献类型：专利
| 作者 | LIU, ANSHENG; PANICCIA, MARIO J.; NICOLAESCU, REMUS; JONES, RICHARD |
| 发表日期 | 2002-12-26 |
| 专利号 | US20020197013A1 |
| 著作权人 | INTEL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate |
| 英文摘要 | A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity. |
| 公开日期 | 2002-12-26 |
| 申请日期 | 2001-09-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTEL CORPORATION |
| 推荐引用方式 GB/T 7714 | LIU, ANSHENG,PANICCIA, MARIO J.,NICOLAESCU, REMUS,et al. Method and apparatus for tuning a laser with a bragg grating in a semiconductor substrate. US20020197013A1. 2002-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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