Semiconductor structure with temperature control device
文献类型：专利
| ; | |
| 作者 | HOLM, PAIGE M.; YAMAMOTO, JOYCE |
| 发表日期 | 2003-01-21 ; 2003-01-21 |
| 专利号 | AU2002303556A1 ; AU2002303556A1 |
| 著作权人 | MOTOROLA, INC. ; MOTOROLA, INC. |
| 国家 | 澳大利亚 ; 澳大利亚 |
| 文献子类 | 发明申请 ; 发明申请 |
| 其他题名 | Semiconductor structure with temperature control device ; Semiconductor structure with temperature control device |
| 英文摘要 | High quality epitaxial layers of monocrystalline materials (308) can be grown overlying monocrystalline substrates (302) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (304) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (306) of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxialgrowth of Zintl phase materials. The monocrystalline substrate carries a temperature control device such as a Peltier device (312) that is thermally coupled (318) with a monocrystalline compound semiconductor layer (308) overlying the layer of monocrystalline oxide.; High quality epitaxial layers of monocrystalline materials (308) can be grown overlying monocrystalline substrates (302) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (304) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (306) of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxialgrowth of Zintl phase materials. The monocrystalline substrate carries a temperature control device such as a Peltier device (312) that is thermally coupled (318) with a monocrystalline compound semiconductor layer (308) overlying the layer of monocrystalline oxide. |
| 公开日期 | 2003-01-21 ; 2003-01-21 |
| 申请日期 | 2002-04-29 ; 2002-04-29 |
| 状态 | 失效 ; 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/52718]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA, INC. |
| 推荐引用方式 GB/T 7714 | HOLM, PAIGE M.,YAMAMOTO, JOYCE. Semiconductor structure with temperature control device, Semiconductor structure with temperature control device. AU2002303556A1, AU2002303556A1. 2003-01-21, 2003-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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