Nitride semiconductor device comprising bonded substrate and fabrication method of the same
文献类型：专利
| 作者 | NAGAHAMA, SHINICHI; SANO, MASAHIKO; YANAMOTO, TOMOYA; SAKAMOTO, KEIJI; YAMAMOTO, MASASHI; MORITA, DAISUKE |
| 发表日期 | 2004-01-28 |
| 专利号 | EP1385215A2 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
| 英文摘要 | A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided. |
| 公开日期 | 2004-01-28 |
| 申请日期 | 2003-07-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | NAGAHAMA, SHINICHI,SANO, MASAHIKO,YANAMOTO, TOMOYA,et al. Nitride semiconductor device comprising bonded substrate and fabrication method of the same. EP1385215A2. 2004-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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