Nitride semiconductor light emitting diode
文献类型：专利
| 作者 | KACHI, TETSU; KATO, SATORU |
| 发表日期 | 2004-01-29 |
| 专利号 | US20040016937A1 |
| 著作权人 | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor light emitting diode |
| 英文摘要 | An increased proportion of light projected from a nitride semiconductor light emitting diode enters the area within a specified angle. The nitride semiconductor light emitting diode is provided with an active layer 32 consisting of a nitride semiconductor, and a light projecting face 2 A reflecting mirror 38 is formed only on a side of the active layer 32 opposite the light projecting face 2 The reflecting mirror 38 is formed at a location from the center of the active layer 32 approximately (k.lambda/2+lambda/4)/n (where lambda is the wavelength of light projected from the active layer 32, n is the mean refractive index of an area between the active layer 32 and the reflecting mirror 38, and k is an integer). This light emitting diode allows directivity to be increased sufficiently, and the coupling efficiency thereof with optical fiber consisting of POF or the like can be improved. |
| 公开日期 | 2004-01-29 |
| 申请日期 | 2003-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53078]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
| 推荐引用方式 GB/T 7714 | KACHI, TETSU,KATO, SATORU. Nitride semiconductor light emitting diode. US20040016937A1. 2004-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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