中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of dendritic nanostructures in Pyrex glass anodically bonded to silicon coated with an aluminum thin film

文献类型:会议论文

作者Hu YQ(胡宇群); Zhao YP(赵亚溥); Yu TX(余同希); Zhao YP
出版日期2008
会议名称14th International Conference on the Strength of Materials (ICSMA 14)
会议日期JUN 04-09, 2006
会议地点Xian Jiaotong Univ, Xian, PEOPLES R CHINA
通讯作者邮箱yzhao@lnm.imech.ac.cn
关键词Anodic Bonding Dendritic Nanostructures Aluminum Thin Film Depletion Layer Mems Ion Drift Processes Borosilicate Glass Depletion
页码611-616
通讯作者Zhao YP
中文摘要Anodic bonding with thin films of metal or alloy as an intermediate layer, finds increasing applications in micro/nanoelectromechanical systems. At the bonding temperature of 350 degrees C, voltage of 400 V, and 30 min duration, the anodic bonding is completed between Pyrex glass and crystalline silicon coated with an aluminum thin film with a thickness comprised between 50 and 230 nm. Sodium-depleted layers and dendritic nanostructures were observed in Pyrex 7740 glass adjacent to the bonding interface. The sodium depletion width does not increase remarkably with the thickness of aluminum film. The dendritic nanostructures result from aluminum diffusion into the Pyrex glass. This experimental research is expected to enhance the understanding of how the depletion layer and dendritic nanostructures affect the quality of anodic bonding. (C) 2007 Elsevier B.V. All rights reserved.
收录类别CPCI-S
会议录Materials Science And Engineering A-Structural Materials Properties Microstructure And Processing
会议录出版者Lausanne
会议录出版地Elsevier Science Sa
语种英语
ISSN号0921-5093
WOS记录号WOS:000256071100154
源URL[http://dspace.imech.ac.cn/handle/311007/25436]  
专题力学研究所_力学所知识产出(1956-2008)
通讯作者Zhao YP
推荐引用方式
GB/T 7714
Hu YQ,Zhao YP,Yu TX,et al. Formation of dendritic nanostructures in Pyrex glass anodically bonded to silicon coated with an aluminum thin film[C]. 见:14th International Conference on the Strength of Materials (ICSMA 14). Xian Jiaotong Univ, Xian, PEOPLES R CHINA. JUN 04-09, 2006.

入库方式: OAI收割

来源:力学研究所

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