中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering

文献类型:期刊论文

作者Jiang JL(姜金龙); Chen D(陈娣); Zhu WJ(朱伟君)
刊名Advanced Materials Research
出版日期2012
卷号581-582页码:540-543
关键词Ti-Si-C-N films microstructure MF magnetron sputtering
ISSN号1022-6680
通讯作者姜金龙
中文摘要Quaternary Ti-Si-C-N films were deposited Si wafer by middle frequency magnetron sputtering Ti80Si20 twin-targets in mixture atmosphere of Ar, CH4 and N2. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) results indicate that the films present an amorphous structure with no columnar structure. These films are quite uniform and dense without large particles. The film deposited at 10 sccm CH4 and 10 sccm N2 flow rates exhibits a maximum hardness of 18.9 GPa and high elastic recovery of 97%.
学科主题材料科学与物理化学
收录类别EI
资助信息the Natural Science Foundation of China (51105186);the Nature Science Foundation of Gansu Province (1014RJZA007);the Development Program for Outstanding Young Teachers in Lanzhou University of Technology (1010ZCX010)
语种英语
公开日期2013-07-12
源URL[http://210.77.64.217/handle/362003/3278]  
专题兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式
GB/T 7714
Jiang JL,Chen D,Zhu WJ. Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering[J]. Advanced Materials Research,2012,581-582:540-543.
APA Jiang JL,Chen D,&Zhu WJ.(2012).Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering.Advanced Materials Research,581-582,540-543.
MLA Jiang JL,et al."Synthesis and characterization of quaternary Ti-Si-C-N film deposited by middle frequency magnetron sputtering".Advanced Materials Research 581-582(2012):540-543.

入库方式: OAI收割

来源:兰州化学物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。