Methods of processing semiconductor wafer backsides having light emitting devices (LEDS) thereon and LEDS so formed
文献类型：专利
| 作者 | SLATER DAVID B. JR.; DONOFRIO MATTHEW |
| 发表日期 | 2005-05-26 |
| 专利号 | CA2545628A1 |
| 著作权人 | CREE, INC. |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Methods of processing semiconductor wafer backsides having light emitting devices (LEDS) thereon and LEDS so formed |
| 英文摘要 | Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed. |
| 公开日期 | 2005-05-26 |
| 申请日期 | 2004-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53465]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | SLATER DAVID B. JR.,DONOFRIO MATTHEW. Methods of processing semiconductor wafer backsides having light emitting devices (LEDS) thereon and LEDS so formed. CA2545628A1. 2005-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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