Temperature-independent external cavity laser
文献类型：专利
| 作者 | PARK, MAHN YONG; KIM, BYOUNG WHI |
| 发表日期 | 2006-05-18 |
| 专利号 | US20060104322A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Temperature-independent external cavity laser |
| 英文摘要 | Hybrid-type external cavity lasers designed to have a semiconductor laser diode mounted on a planar waveguide platform by a flip-chip bonding method. The temperature independent external cavity laser comprises a semiconductor laser diode, a planar waveguide platform, and a thin film multi-layered reflection filter. The semiconductor laser diode includes an active region to generate light, and at least one light-emitting surface. The planar waveguide platform includes a substrate, a metallic pattern formed on a predetermined region of the substrate, a waveguide structure, and a trench portion. The waveguide structure comprises a lower clad layer, a core, and an upper clad layer sequentially stacked in this order on a region of the substrate excluding the predetermined region formed of the metallic pattern. The trench portion has opposite side surfaces on which the core is exposed. |
| 公开日期 | 2006-05-18 |
| 申请日期 | 2005-05-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | PARK, MAHN YONG,KIM, BYOUNG WHI. Temperature-independent external cavity laser. US20060104322A1. 2006-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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