中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices

文献类型:专利

作者IBBETSON, JAMES; KELLER, BERND; PARIKH, PRIMIT
发表日期2006-01-12
专利号WO2006005062A2
著作权人CREE, INC.
国家世界知识产权组织
文献子类发明申请
其他题名Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
英文摘要A packaged light emitting device includes a carrier substrate (20) having a top surface and a bottom surface, first and second conductive vias (22S, B) extending from the top surface of the substrate (20) to the bottom surface of the substrate, and a bond pad (24) on the top surface of the substrate in electrical contact with the first conductive via (22A). A diode (16) having first and second electrodes is mounted on the bond pad with the first electrode (26) is in electrical contact with the bond pad (24). A passivation layer (32) is formed on the diode (16), exposing the second electrode of the diode (16). A conductive trace (33) is formed on the top surface of the carrier substrate in electrical contact with the second conductive via (22B) and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode. Methods of packaging light emitting devices include providing an epiwafer including a growth substrate and an epitaxial structure on the growth substrate, bonding a carrier substrate to the epitaxial structure of the epiwafer, forming a plurality of conductive vias through the carrier substrate, defining a plurality of isolated diodes in the epitaxial structure, and electrically connecting at least one conductive via to respective ones of the plurality of isolated diodes.
公开日期2006-01-12
申请日期2005-06-30
状态未确认
源URL[http://ir.opt.ac.cn/handle/181661/53685]  
专题半导体激光器专利数据库
作者单位CREE, INC.
推荐引用方式
GB/T 7714
IBBETSON, JAMES,KELLER, BERND,PARIKH, PRIMIT. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices. WO2006005062A2. 2006-01-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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