Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier
文献类型：专利
| 作者 | LIU, ANSHENG; PANICCIA, MARIO; RONG, HAISHENG |
| 发表日期 | 2007-06-20 |
| 专利号 | EP1797624A2 |
| 著作权人 | INTEL CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier |
| 英文摘要 | A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide. |
| 公开日期 | 2007-06-20 |
| 申请日期 | 2005-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTEL CORPORATION |
| 推荐引用方式 GB/T 7714 | LIU, ANSHENG,PANICCIA, MARIO,RONG, HAISHENG. Two-photon absorption generated carrier lifetime reduction in semiconductor waveguide for semiconductor based raman laser and amplifier. EP1797624A2. 2007-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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