Laterally-integrated waveguide photodetector apparatus and related coupling methods
文献类型：专利
| 作者 | AHN, DONGHWAN; LIU, JIFENG; MICHEL, JURGEN; KIMERLING, LIONEL C. |
| 发表日期 | 2007-05-10 |
| 专利号 | US20070104441A1 |
| 著作权人 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laterally-integrated waveguide photodetector apparatus and related coupling methods |
| 英文摘要 | High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%. |
| 公开日期 | 2007-05-10 |
| 申请日期 | 2005-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | AHN, DONGHWAN,LIU, JIFENG,MICHEL, JURGEN,et al. Laterally-integrated waveguide photodetector apparatus and related coupling methods. US20070104441A1. 2007-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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