Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member
文献类型：专利
| 作者 | KATO, HANAKO; MORI, YUTAKA; KOBAYASHI, HIROSHI; TOMURA, TSUBASA; YAMAZAKI, MASANORI; ABE, MARI |
| 发表日期 | 2009-02-19 |
| 专利号 | US20090045422A1 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
| 英文摘要 | To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 45 or larger. |
| 公开日期 | 2009-02-19 |
| 申请日期 | 2006-09-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | KATO, HANAKO,MORI, YUTAKA,KOBAYASHI, HIROSHI,et al. Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member. US20090045422A1. 2009-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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