Epitaxial substrate, method of making same and method of making a semiconductor chip
文献类型：专利
| 作者 | PLOSSL, ANDREAS; KRAUTER, GERTRUD; BUTENDEICH, RAINER |
| 发表日期 | 2007-04-05 |
| 专利号 | US20070077744A1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Epitaxial substrate, method of making same and method of making a semiconductor chip |
| 英文摘要 | Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate, and a method of making the epitaxial substrate. Further described is a method of making a thin-film semiconductor chip, particularly an LED, wherein an epitaxial substrate is prepared, wherein at least one LED structure is grown on said epitaxial substrate and the LED structure is bonded to an acceptor substrate, and wherein the semiconductor wafer is released by at least partially destroying the sacrificial layer, and the at least one LED structure is singulated. |
| 公开日期 | 2007-04-05 |
| 申请日期 | 2006-09-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53852]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | PLOSSL, ANDREAS,KRAUTER, GERTRUD,BUTENDEICH, RAINER. Epitaxial substrate, method of making same and method of making a semiconductor chip. US20070077744A1. 2007-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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