Integrated semiconductor light-emitting device and its manufacturing method
文献类型：专利
| 作者 | HORIE, HIDEYOSHI |
| 发表日期 | 2010-12-23 |
| 专利号 | US20100320488A1 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor light-emitting device and its manufacturing method |
| 英文摘要 | An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device. |
| 公开日期 | 2010-12-23 |
| 申请日期 | 2007-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI. Integrated semiconductor light-emitting device and its manufacturing method. US20100320488A1. 2010-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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