Preparation of ZnIn2S4 Film Electrodes by the SILAR Technique
文献类型：期刊论文
| 作者 | Yin JB(尹建波)1,2; Jia JH(贾均红)1 ; Yi GW(易戈文)1; Wang LQ(王立强); Jia JH(贾均红)
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| 刊名 | Journal of Chinese Chemical Society
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| 出版日期 | 2012 |
| 卷号 | 59期号:10页码:1365-1368 |
| 关键词 | Zinc indium sulfide Thin films SILAR technique Photovoltaic properties |
| ISSN号 | 0009-4536 |
| 通讯作者 | 贾均红 |
| 英文摘要 | Nanostructured ternary zinc indium sulfide (ZnIn2S4, ZIS) thin film electrodes were fabricated on fluorine doped tin oxide (FTO) coated glass substrates using the successive ionic layer adsorption and reaction (SILAR) technique. New procedures for the growth of ZIS films are presented. The X-Ray diffraction (XRD) results show that the ZIS films are hexagonal structure and the band gap of the as-prepared ZIS films is 2.5 eV. The photocurrent response of the films shows that the ZIS demonstrates the typical characteristic of n-type semiconductor materials and the average response photocurrent of ZIS thin film is almost two times as high as that of ZnS. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 资助信息 | the National Natural Science Foundation of China (Grant No. 50972148;51175490) |
| 语种 | 英语 |
| WOS记录号 | WOS:000309945300031 |
| 公开日期 | 2013-07-12 |
| 源URL | [http://210.77.64.217/handle/362003/3352]  |
| 专题 | 兰州化学物理研究所_固体润滑国家重点实验室 |
| 通讯作者 | Jia JH(贾均红) |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 10049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yin JB,Jia JH,Yi GW,et al. Preparation of ZnIn2S4 Film Electrodes by the SILAR Technique[J]. Journal of Chinese Chemical Society,2012,59(10):1365-1368. |
| APA | Yin JB,Jia JH,Yi GW,Wang LQ,&贾均红.(2012).Preparation of ZnIn2S4 Film Electrodes by the SILAR Technique.Journal of Chinese Chemical Society,59(10),1365-1368. |
| MLA | Yin JB,et al."Preparation of ZnIn2S4 Film Electrodes by the SILAR Technique".Journal of Chinese Chemical Society 59.10(2012):1365-1368. |
入库方式： OAI收割
来源：兰州化学物理研究所
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