Electrically pumped semiconductor evanescent laser
文献类型：专利
| 作者 | BOWERS, JOHN E.; COHEN, ODED; FANG, ALEXANDER W.; JONES, RICHARD; PANICCIA, MARIO J.; PARK, HYUNDAI |
| 发表日期 | 2008-12-31 |
| 专利号 | WO2008097330A3 |
| 著作权人 | INTEL CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrically pumped semiconductor evanescent laser |
| 英文摘要 | An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode. |
| 公开日期 | 2008-12-31 |
| 申请日期 | 2007-06-25 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/53941]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTEL CORPORATION |
| 推荐引用方式 GB/T 7714 | BOWERS, JOHN E.,COHEN, ODED,FANG, ALEXANDER W.,et al. Electrically pumped semiconductor evanescent laser. WO2008097330A3. 2008-12-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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