中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light emitting device, lighting system and process for producing semiconductor light emitting device

文献类型:专利

作者TAKEUCHI, KUNIO; KUNOH, YASUMITSU
发表日期2009-05-27
专利号EP2063468A1
著作权人EPISTAR CORPORATION
国家欧洲专利局
文献子类发明申请
其他题名Semiconductor light emitting device, lighting system and process for producing semiconductor light emitting device
英文摘要A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).
公开日期2009-05-27
申请日期2007-10-12
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/53970]  
专题半导体激光器专利数据库
作者单位EPISTAR CORPORATION
推荐引用方式
GB/T 7714
TAKEUCHI, KUNIO,KUNOH, YASUMITSU. Semiconductor light emitting device, lighting system and process for producing semiconductor light emitting device. EP2063468A1. 2009-05-27.

入库方式: OAI收割

来源:西安光学精密机械研究所

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