Process for producing light-emitting semiconductor device
文献类型：专利
| 作者 | SUZUKI, AKIKO; FUJIEDA, SHINETSU; KONO, TATSUOKI; TAKAHASHI, TOSHIHIDE; OOTSUKA, KAZUAKI; OSHIO, HIROAKI; TAMURA, HIDEO |
| 发表日期 | 2009-07-09 |
| 专利号 | US20090176323A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Process for producing light-emitting semiconductor device |
| 英文摘要 | A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material. |
| 公开日期 | 2009-07-09 |
| 申请日期 | 2008-12-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54061]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SUZUKI, AKIKO,FUJIEDA, SHINETSU,KONO, TATSUOKI,et al. Process for producing light-emitting semiconductor device. US20090176323A1. 2009-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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