Light-emitting diode, electronic apparatus, and light-emitting diode manufacturing method
文献类型：专利
| 作者 | ISHIDA, YUICHI; YAZAWA, KAZUAKI; NAKAYAMA, NORIKAZU |
| 发表日期 | 2014-08-27 |
| 专利号 | EP2093814A3 |
| 著作权人 | SONY CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting diode, electronic apparatus, and light-emitting diode manufacturing method |
| 英文摘要 | Disclosed is a light-emitting diode LED. The light-emitting diode includes an EL layer (6) and a heat dissipation layer (2). The EL layer (6) includes a first semiconductor layer (5), a second semiconductor layer (3), and an active layer (4), the first semiconductor layer (5) having a first conductivity type that is one of n type and p type, the second semiconductor layer (3) having a second conductivity type that is opposite to the first conductivity type, the active layer (4) being provided between the first semiconductor layer (5) and the second semiconductor layer (3). The heat dissipation layer (2) has the first conductivity type and is bonded to a side of the EL layer (6) closer to the second semiconductor layer (3) than the first semiconductor layer (5). |
| 公开日期 | 2014-08-27 |
| 申请日期 | 2009-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54073]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ISHIDA, YUICHI,YAZAWA, KAZUAKI,NAKAYAMA, NORIKAZU. Light-emitting diode, electronic apparatus, and light-emitting diode manufacturing method. EP2093814A3. 2014-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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