Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
文献类型：专利
| 作者 | SEONG, TAE YEON |
| 发表日期 | 2011-06-02 |
| 专利号 | US20110127567A1 |
| 著作权人 | LG INNOTEK CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates |
| 英文摘要 | The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is formed by successively laminating a sacrificial layer, a heat-sink layer and a bonding layer on a selected supporting substrate. A method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device includes: preparing a first wafer in which a semiconductor multi-layered light-emitting structure is laminated/grown on an upper part of an initial substrate; preparing a second wafer which is a supporting substrate for preparing a semiconductor light-emitting device; bonding the second wafer on an upper part of the first wafer; separating the initial substrate of the first wafer from a result of the bonding; performing passivation after forming a first ohmic contact electrode on an upper part of the first wafer from which the initial substrate is separated; and preparing a single-chip by severing a result of the passivation. |
| 公开日期 | 2011-06-02 |
| 申请日期 | 2009-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54085]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEONG, TAE YEON. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates. US20110127567A1. 2011-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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