Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base
文献类型：专利
| 作者 | KURAMOTO, MASAFUMI; OGAWA, SATORU; NIWA, MIKI |
| 发表日期 | 2017-04-05 |
| 专利号 | EP3151268A2 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base |
| 英文摘要 | An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element. |
| 公开日期 | 2017-04-05 |
| 申请日期 | 2010-01-20 |
| 状态 | 申请中 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54131]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KURAMOTO, MASAFUMI,OGAWA, SATORU,NIWA, MIKI. Method of producing a semiconductor device by bonding silver oxide on a surface of a semiconductor element with silver or silver oxide on a surface of a base. EP3151268A2. 2017-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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