Semiconductor device and method for manufacturing same
文献类型：专利
| 作者 | KURAMOTO, MASAFUMI; OGAWA, SATORU; NIWA, MIKI |
| 发表日期 | 2011-11-30 |
| 专利号 | EP2390932A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method for manufacturing same |
| 英文摘要 | An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900°C to the semiconductor device and the base. |
| 公开日期 | 2011-11-30 |
| 申请日期 | 2010-01-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KURAMOTO, MASAFUMI,OGAWA, SATORU,NIWA, MIKI. Semiconductor device and method for manufacturing same. EP2390932A1. 2011-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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