Semiconductor integrated optical device and method of making the same
文献类型：专利
| 作者 | FUKUDA, CHIE |
| 发表日期 | 2010-11-11 |
| 专利号 | US20100284019A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor integrated optical device and method of making the same |
| 英文摘要 | A semiconductor integrated optical device includes a group III-V compound semiconductor substrate, a semiconductor optical device region, and an optical waveguide region. The semiconductor optical device region and the optical waveguide region are arranged on the group III-V compound semiconductor substrate. The semiconductor optical device region has a first optical waveguide made of group III-V compound semiconductor. The optical waveguide region has a second optical waveguide optically coupled with the first optical waveguide. The optical waveguide region further includes a silicon oxide layer. The silicon oxide layer is disposed between the group III-V compound semiconductor substrate and the second optical waveguide. The second optical waveguide is made of semiconductor which is different from the group III-V compound semiconductor. |
| 公开日期 | 2010-11-11 |
| 申请日期 | 2010-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54155]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | FUKUDA, CHIE. Semiconductor integrated optical device and method of making the same. US20100284019A1. 2010-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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