Semiconductor light-emitting device and method for fabricating the same
文献类型：专利
| 作者 | JEONG, HWAN HEE; LEE, SANG YOUL; SONG, JUNE O.; CHOI, KWANG KI |
| 发表日期 | 2011-04-21 |
| 专利号 | US20110089451A1 |
| 著作权人 | LG INNOTEK CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and method for fabricating the same |
| 英文摘要 | A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer. |
| 公开日期 | 2011-04-21 |
| 申请日期 | 2010-06-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54159]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO., LTD. |
| 推荐引用方式 GB/T 7714 | JEONG, HWAN HEE,LEE, SANG YOUL,SONG, JUNE O.,et al. Semiconductor light-emitting device and method for fabricating the same. US20110089451A1. 2011-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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