A temperature control device for optoelectronic devices
文献类型：专利
| 作者 | KIM, YOUNG-HEE; VLASOV, YURII; GREEN, WILLIAM, MICHAEL; ASSEFA, SOLOMON; VAN CAMPENHOUT, JORIS |
| 发表日期 | 2011-01-13 |
| 专利号 | WO2011003871A1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | A temperature control device for optoelectronic devices |
| 英文摘要 | Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device. |
| 公开日期 | 2011-01-13 |
| 申请日期 | 2010-07-05 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54164]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | KIM, YOUNG-HEE,VLASOV, YURII,GREEN, WILLIAM, MICHAEL,et al. A temperature control device for optoelectronic devices. WO2011003871A1. 2011-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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