High power semiconductor laser diodes
文献类型：专利
| 作者 | KREJCI, MARTIN; LICHTENSTEIN, NORBERT; WEISS, STEFAN; BOUCART, JULIEN; TODT, RENE |
| 发表日期 | 2011-03-03 |
| 专利号 | US20110051758A1 |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | High power semiconductor laser diodes |
| 英文摘要 | A high power laser source comprises at least a bar of laser diodes with a first coefficient of thermal expansion (CTEbar), a submount onto which said laser bar is affixed with a second coefficient of thermal expansion (CTEsub), and a cooler onto which said submount is affixed with a third coefficient of thermal expansion (CTEcool). The submount/cooling assembly exhibits an effective fourth coefficient of expansion (CTEeff). According to the invention, mechanical stress exerted to the laser bar improves reliability and optical performance. To effect this, CTEeff must differ from CTEbar, CTEeff≠CTEbar. Preferably, CTEeff should differ by a predetermined amount from CTEbar. The difference is achieved in two ways: either by selecting CTEsub>CTEbar and CTEsub≦CTEcool, or by selecting CTEsub |
| 公开日期 | 2011-03-03 |
| 申请日期 | 2010-09-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | KREJCI, MARTIN,LICHTENSTEIN, NORBERT,WEISS, STEFAN,et al. High power semiconductor laser diodes. US20110051758A1. 2011-03-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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