Laser crystal components joined with thermal management devices
文献类型：专利
| 作者 | USHINSKY, MICHAEL |
| 发表日期 | 2012-06-14 |
| 专利号 | US20120147913A1 |
| 著作权人 | RAYTHEON COMPANY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser crystal components joined with thermal management devices |
| 英文摘要 | A method for preparing a surface of a YAG crystal for thermal bonding includes performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal. Also, a micro-chip device having a YAG crystal whose surface is prepared with the above disclosed method is provided and a device for forming a metallization pattern on a surface of the YAG crystal is provided. |
| 公开日期 | 2012-06-14 |
| 申请日期 | 2010-09-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54177]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RAYTHEON COMPANY |
| 推荐引用方式 GB/T 7714 | USHINSKY, MICHAEL. Laser crystal components joined with thermal management devices. US20120147913A1. 2012-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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