中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Heat sink, method of producing same, and semiconductor laser device

文献类型:专利

作者NIWA, YOSHIAKI
发表日期2012-01-12
专利号US20120008655A1
著作权人SONY CORPORATION
国家美国
文献子类发明申请
其他题名Heat sink, method of producing same, and semiconductor laser device
英文摘要A heat sink enabled to prevent structural deterioration of an inner wall of a flow channel caused by corrosion a semiconductor laser device are provided. The heat sink includes a main body, a flow channel which is provided in the main body, and inside which a cooling medium passes through, and a passivation film covering an inner-wall surface of the flow channel.
公开日期2012-01-12
申请日期2011-06-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/54240]  
专题半导体激光器专利数据库
作者单位SONY CORPORATION
推荐引用方式
GB/T 7714
NIWA, YOSHIAKI. Heat sink, method of producing same, and semiconductor laser device. US20120008655A1. 2012-01-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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