Vertical Surface Emitting Semiconductor Device
文献类型：专利
| 作者 | STRITTMATTER, ANDRE; CHUA, CHRISTOPHER L.; KIESEL, PETER; JOHNSON, NOBLE M. |
| 发表日期 | 2011-11-03 |
| 专利号 | US20110268143A1 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical Surface Emitting Semiconductor Device |
| 英文摘要 | A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved. |
| 公开日期 | 2011-11-03 |
| 申请日期 | 2011-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54249]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | STRITTMATTER, ANDRE,CHUA, CHRISTOPHER L.,KIESEL, PETER,et al. Vertical Surface Emitting Semiconductor Device. US20110268143A1. 2011-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。