Semiconductor device and method for manufacturing semiconductor device
文献类型:专利
作者 | TAKAHASHI, HIDEKAZU; YAMADA, DAIKI; MONMA, YOHEI; IGUCHI, TAKAHIRO; ADACHI, HIROKI; YAMAZAKI, SHUNPEI |
发表日期 | 2012-01-26 |
专利号 | US20120021540A1 |
著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor device and method for manufacturing semiconductor device |
英文摘要 | A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors. |
公开日期 | 2012-01-26 |
申请日期 | 2011-09-24 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/54273] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
推荐引用方式 GB/T 7714 | TAKAHASHI, HIDEKAZU,YAMADA, DAIKI,MONMA, YOHEI,et al. Semiconductor device and method for manufacturing semiconductor device. US20120021540A1. 2012-01-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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