中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor device and method for manufacturing semiconductor device

文献类型:专利

作者TAKAHASHI, HIDEKAZU; YAMADA, DAIKI; MONMA, YOHEI; IGUCHI, TAKAHIRO; ADACHI, HIROKI; YAMAZAKI, SHUNPEI
发表日期2012-01-26
专利号US20120021540A1
著作权人SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
国家美国
文献子类发明申请
其他题名Semiconductor device and method for manufacturing semiconductor device
英文摘要A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
公开日期2012-01-26
申请日期2011-09-24
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/54273]  
专题半导体激光器专利数据库
作者单位SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式
GB/T 7714
TAKAHASHI, HIDEKAZU,YAMADA, DAIKI,MONMA, YOHEI,et al. Semiconductor device and method for manufacturing semiconductor device. US20120021540A1. 2012-01-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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