Ultra-thin ohmic contacts for p-type nitride light emitting devices
文献类型：专利
| 作者 | RAFFETTO, MARK; BHARATHAN, JAYESH; HABERERN, KEVIN; BERGMANN, MICHAEL; EMERSON, DAVID; IBBETSON, JAMES; LI, TING |
| 发表日期 | 2012-04-05 |
| 专利号 | US20120080688A1 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ultra-thin ohmic contacts for p-type nitride light emitting devices |
| 英文摘要 | A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode. |
| 公开日期 | 2012-04-05 |
| 申请日期 | 2011-10-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54278]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | RAFFETTO, MARK,BHARATHAN, JAYESH,HABERERN, KEVIN,et al. Ultra-thin ohmic contacts for p-type nitride light emitting devices. US20120080688A1. 2012-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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