Semiconductor device and production method therefor
文献类型：专利
| 作者 | KURAMOTO, MASAFUMI; OGAWA, SATORU; KUNIMUNE, TEPPEI |
| 发表日期 | 2012-06-21 |
| 专利号 | US20120153486A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and production method therefor |
| 英文摘要 | An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base. |
| 公开日期 | 2012-06-21 |
| 申请日期 | 2011-12-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54294]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KURAMOTO, MASAFUMI,OGAWA, SATORU,KUNIMUNE, TEPPEI. Semiconductor device and production method therefor. US20120153486A1. 2012-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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