中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Methods of forming light emitting devices having current reducing structures

文献类型:专利

作者EMERSON, DAVID TODD; HABERERN, KEVIN; BERGMANN, MICHAEL JOHN; SLATER, JR., DAVID B.; DONOFRIO, MATTHEW; EDMOND, JOHN
发表日期2012-06-21
专利号US20120153343A1
著作权人CREE, INC.
国家美国
文献子类发明申请
其他题名Methods of forming light emitting devices having current reducing structures
英文摘要A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
公开日期2012-06-21
申请日期2012-02-27
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/54304]  
专题半导体激光器专利数据库
作者单位CREE, INC.
推荐引用方式
GB/T 7714
EMERSON, DAVID TODD,HABERERN, KEVIN,BERGMANN, MICHAEL JOHN,et al. Methods of forming light emitting devices having current reducing structures. US20120153343A1. 2012-06-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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