Methods of forming light emitting devices having current reducing structures
文献类型:专利
作者 | EMERSON, DAVID TODD; HABERERN, KEVIN; BERGMANN, MICHAEL JOHN; SLATER, JR., DAVID B.; DONOFRIO, MATTHEW; EDMOND, JOHN |
发表日期 | 2012-06-21 |
专利号 | US20120153343A1 |
著作权人 | CREE, INC. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Methods of forming light emitting devices having current reducing structures |
英文摘要 | A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. |
公开日期 | 2012-06-21 |
申请日期 | 2012-02-27 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/54304] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | CREE, INC. |
推荐引用方式 GB/T 7714 | EMERSON, DAVID TODD,HABERERN, KEVIN,BERGMANN, MICHAEL JOHN,et al. Methods of forming light emitting devices having current reducing structures. US20120153343A1. 2012-06-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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