High speed light emitting semiconductor methods and devices
文献类型：专利
| 作者 | WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK; THEN, HAN WUI; WU, CHAO-HSIN |
| 发表日期 | 2012-10-04 |
| 专利号 | US20120249009A1 |
| 著作权人 | WALTER GABRIEL |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | High speed light emitting semiconductor methods and devices |
| 英文摘要 | A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component. |
| 公开日期 | 2012-10-04 |
| 申请日期 | 2012-05-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54323]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WALTER GABRIEL |
| 推荐引用方式 GB/T 7714 | WALTER, GABRIEL,FENG, MILTON,HOLONYAK, JR., NICK,et al. High speed light emitting semiconductor methods and devices. US20120249009A1. 2012-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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