Microchip and SOI substrate for manufacturing microchip
文献类型：专利
| 作者 | AKIYAMA, SHOJI; KUBOTA, YOSHIHIRO; ITO, ATSUO; TANAKA, KOICHI; KAWAI, MAKOTO; TOBISAKA, YUUJI |
| 发表日期 | 2012-09-13 |
| 专利号 | US20120228730A1 |
| 著作权人 | SHIN-ETSU CHEMICAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Microchip and SOI substrate for manufacturing microchip |
| 英文摘要 | A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer. |
| 公开日期 | 2012-09-13 |
| 申请日期 | 2012-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54335]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHIN-ETSU CHEMICAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | AKIYAMA, SHOJI,KUBOTA, YOSHIHIRO,ITO, ATSUO,et al. Microchip and SOI substrate for manufacturing microchip. US20120228730A1. 2012-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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