Method of manufacturing thin-film bonded substrate used for semiconductor device
文献类型：专利
| 作者 | KIM, DONGHYUN; KIM, DONG-WOON; KIM, MIKYOUNG; KIM, MINJU; KIM, A-RA; KIM, HYUNJOON; SHUR, JOONG WON; WOO, KWANG-JE; LEE, BOHYUN; JEON, JONGPIL |
| 发表日期 | 2013-12-04 |
| 专利号 | EP2669961A2 |
| 著作权人 | SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of manufacturing thin-film bonded substrate used for semiconductor device |
| 英文摘要 | A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other. |
| 公开日期 | 2013-12-04 |
| 申请日期 | 2013-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIM, DONGHYUN,KIM, DONG-WOON,KIM, MIKYOUNG,et al. Method of manufacturing thin-film bonded substrate used for semiconductor device. EP2669961A2. 2013-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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