Semiconductor device and method of fabricating the same
文献类型：专利
| 作者 | JUN, CHI HOON; KO, SANG CHOON; MOON, SEOK-HWAN; CHANG, WOOJIN; BAE, SUNG-BUM; PARK, YOUNG RAK; NA, JE HO; MUN, JAE KYOUNG; NAM, EUN SOO |
| 发表日期 | 2016-08-04 |
| 专利号 | US20160225631A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method of fabricating the same |
| 英文摘要 | Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another. |
| 公开日期 | 2016-08-04 |
| 申请日期 | 2016-04-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | JUN, CHI HOON,KO, SANG CHOON,MOON, SEOK-HWAN,et al. Semiconductor device and method of fabricating the same. US20160225631A1. 2016-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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