Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
文献类型：专利
| 作者 | BERNHARDT, MICHAEL J. |
| 发表日期 | 2016-12-22 |
| 专利号 | US20160372649A1 |
| 著作权人 | MICRON TECHNOLOGY, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing |
| 英文摘要 | Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate. |
| 公开日期 | 2016-12-22 |
| 申请日期 | 2016-09-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54723]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MICRON TECHNOLOGY, INC. |
| 推荐引用方式 GB/T 7714 | BERNHARDT, MICHAEL J.. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing. US20160372649A1. 2016-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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