Semiconductor Structure with Stress-Reducing Buffer Structure
文献类型：专利
| 作者 | SHATALOV, MAXIM S.; YANG, JINWEI; DOBRINSKY, ALEXANDER; SHUR, MICHAEL; GASKA, REMIGIJUS |
| 发表日期 | 2017-04-20 |
| 专利号 | US20170110628A1 |
| 著作权人 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Structure with Stress-Reducing Buffer Structure |
| 英文摘要 | A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled. |
| 公开日期 | 2017-04-20 |
| 申请日期 | 2016-12-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54753]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
| 推荐引用方式 GB/T 7714 | SHATALOV, MAXIM S.,YANG, JINWEI,DOBRINSKY, ALEXANDER,et al. Semiconductor Structure with Stress-Reducing Buffer Structure. US20170110628A1. 2017-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。