Method of making a gallium nitride device
文献类型：专利
| 作者 | BEDELL, STEPHEN W.; FOGEL, KEITH E.; LAURO, PAUL A.; SADANA, DEVENDRA K. |
| 发表日期 | 2017-10-12 |
| 专利号 | US20170294517A1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of making a gallium nitride device |
| 英文摘要 | A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer. |
| 公开日期 | 2017-10-12 |
| 申请日期 | 2017-06-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/54795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | BEDELL, STEPHEN W.,FOGEL, KEITH E.,LAURO, PAUL A.,et al. Method of making a gallium nitride device. US20170294517A1. 2017-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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